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STW21N65M5
- Part No
- STW21N65M5
- Manufacturer
- STMicroelectronics
- Description
- N-channel 650 V, 0.150 Ohm, 17 A MDmesh(TM) V Power MOSFET in TO-247
- Datasheet
- STW21N65M5
- Test Report
- Available
- Samples
- Available
Request for Quote
- Availability:
- Available
Product Specification
| Specification | Value |
|---|---|
| Continuous Drain Current (ID) | 17 A |
| Drain to Source Breakdown Voltage | 650 V |
| Drain to Source Resistance | 190 mΩ |
| Drain to Source Voltage (Vdss) | 650 V |
| Element Configuration | Single |
| Fall Time | 24 ns |
| Gate to Source Voltage (Vgs) | 25 V |
| Input Capacitance | 1.95 nF |
| Max Operating Temperature | 150 °C |
| Max Power Dissipation | 125 W |
| Min Breakdown Voltage | 650 V |
| Min Operating Temperature | -55 °C |
| Number of Elements | 1 |
| Power Dissipation | 125 W |
| Rds On Max | 190 mΩ |
| Resistance | 190 mΩ |
| Rise Time | 10 ns |
| Threshold Voltage | 4 V |
| Turn-Off Delay Time | 12 ns |
| Case/Package | TO-247 |
| Mount | Through Hole |
| Number of Pins | 3 |
| Number of Terminals | 3 |
| Height | 20.15 mm |
| Length | 15.75 mm |
| Width | 5.15 mm |
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