STF6N60M2 Generic image

STF6N60M2

Part No
STF6N60M2
Manufacturer
STMicroelectronics
Description
MOSFET N-CH 600V 4.5A TO220FP
Datasheet
STF6N60M2
Test Report
Available
Samples
Available

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    Product Specification

    Specification Value
    Continuous Drain Current (ID) 4.5 A
    Drain to Source Breakdown Voltage 600 V
    Drain to Source Resistance 1.2 Ω
    Drain to Source Voltage (Vdss) 600 V
    Element Configuration Single
    Fall Time 22.5 ns
    Gate to Source Voltage (Vgs) 25 V
    Input Capacitance 232 pF
    Max Operating Temperature 150 °C
    Max Power Dissipation 20 W
    Min Breakdown Voltage 600 V
    Min Operating Temperature -55 °C
    Number of Channels 1
    Number of Elements 1
    Power Dissipation 20 W
    Rds On Max 1.2 Ω
    Rise Time 7.4 ns
    Turn-Off Delay Time 24 ns
    Turn-On Delay Time 9.5 ns
    Case/Package TO-220-3
    Mount Through Hole
    Number of Pins 3
    Number of Terminals 3
    Height 16.4 mm
    Length 10.4 mm
    Width 4.6 mm
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