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STU11N65M2
- Part No
- STU11N65M2
- Manufacturer
- STMicroelectronics
- Description
- MOSFET N-CH 650V 7A IPAK
- Datasheet
- STU11N65M2
- Test Report
- Available
- Samples
- Available
Request for Quote
- Availability:
- Available
Product Specification
| Specification | Value |
|---|---|
| Continuous Drain Current (ID) | 7 A |
| Drain to Source Breakdown Voltage | 650 V |
| Drain to Source Resistance | 680 mΩ |
| Drain to Source Voltage (Vdss) | 650 V |
| Fall Time | 15 ns |
| Gate to Source Voltage (Vgs) | 25 V |
| Input Capacitance | 410 pF |
| Max Operating Temperature | 150 °C |
| Max Power Dissipation | 85 W |
| Min Breakdown Voltage | 650 V |
| Min Operating Temperature | -55 °C |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Rds On Max | 680 mΩ |
| Resistance | 600 mΩ |
| Rise Time | 7.5 ns |
| Threshold Voltage | 3 V |
| Turn-Off Delay Time | 26 ns |
| Turn-On Delay Time | 8.5 ns |
| Case/Package | TO-251-3 |
| Mount | Through Hole |
| Number of Pins | 3 |
| Number of Terminals | 3 |
| Weight | 3.949996 g |
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