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SCTW100N65G2AG
- Part No
- SCTW100N65G2AG
- Manufacturer
- STMicroelectronics
- Description
- Automotive silicon carbide Power MOSFET 650 V, 100 A, 22 mOhm (typ. TJ = 150 C) in an HiP247 package
- Datasheet
- SCTW100N65G2AG
- Test Report
- Available
- Samples
- Available
Request for Quote
- Availability:
- Available
Product Specification
| Specification | Value |
|---|---|
| Continuous Drain Current (ID) | 100 A |
| Drain to Source Voltage (Vdss) | 650 V |
| Max Power Dissipation | 420 W |
| Rds On Max | 26 mΩ |
| Schedule B | 8541290080|8541290080|8541290080|8541290080|8541290080 |
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