STS3P6F6 Generic image

STS3P6F6

Part No
STS3P6F6
Manufacturer
STMicroelectronics
Description
MOSFET P-CH 60V 3A 8SOIC
Test Report
Available
Samples
Available

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    Available

    Product Specification

    Specification Value
    Continuous Drain Current (ID) 3 A
    Drain to Source Breakdown Voltage -60 V
    Drain to Source Resistance 130 mΩ
    Drain to Source Voltage (Vdss) 60 V
    Element Configuration Single
    Fall Time 3.7 ns
    Gate to Source Voltage (Vgs) 20 V
    Input Capacitance 340 pF
    Max Operating Temperature 150 °C
    Max Power Dissipation 2.7 W
    Min Operating Temperature -55 °C
    Number of Elements 1
    Packaging Digi-Reel®
    Power Dissipation 2.7 W
    Rds On Max 160 mΩ
    Resistance 160 mΩ
    Rise Time 5.3 ns
    Turn-Off Delay Time 14 ns
    Turn-On Delay Time 6.4 ns
    Case/Package SO
    Mount Surface Mount
    Number of Pins 8
    Height 1.5 mm
    Length 5 mm
    Width 4 mm
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