STS10N3LH5 Generic image

STS10N3LH5

Part No
STS10N3LH5
Manufacturer
STMicroelectronics
Description
STS10N3LH5 Series 10 V 10 A 21 mOhm N-Ch STripFET™ V Power Mosfet - SOIC-8
Datasheet
STS10N3LH5
Test Report
Available
Samples
Available

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    Availability:
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    Product Specification

    Specification Value
    Continuous Drain Current (ID) 10 A
    Drain to Source Resistance 28 mΩ
    Drain to Source Voltage (Vdss) 30 V
    Fall Time 2.8 ns
    Gate to Source Voltage (Vgs) 22 V
    Input Capacitance 475 pF
    Max Operating Temperature 150 °C
    Max Power Dissipation 2.5 W
    Min Breakdown Voltage 30 V
    Min Operating Temperature -55 °C
    Number of Elements 1
    Packaging Digi-Reel®
    Rds On Max 21 mΩ
    Rise Time 22 ns
    Turn-Off Delay Time 13 ns
    Turn-On Delay Time 4 ns
    Case/Package SOIC
    Mount Surface Mount
    Number of Pins 8
    Number of Terminals 8
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