STP12NK60Z Generic image

STP12NK60Z

Part No
STP12NK60Z
Manufacturer
STMicroelectronics
Description
MOSFET N-CH 600V 10A TO220
Datasheet
STP12NK60Z
Test Report
Available
Samples
Available

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    Product Specification

    Specification Value
    Continuous Drain Current (ID) 10 A
    Current Rating 10 A
    Drain to Source Resistance 640 mΩ
    Drain to Source Voltage (Vdss) 600 V
    Dual Supply Voltage 600 V
    Element Configuration Single
    Fall Time 31.5 ns
    Gate to Source Voltage (Vgs) 30 V
    Input Capacitance 1.74 nF
    Max Operating Temperature 150 °C
    Max Power Dissipation 150 W
    Min Breakdown Voltage 600 V
    Min Operating Temperature -55 °C
    Nominal Vgs 3.75 V
    Number of Elements 1
    Power Dissipation 150 W
    Rds On Max 640 mΩ
    Rise Time 18.5 ns
    Termination Through Hole
    Turn-Off Delay Time 55 ns
    Voltage Rating (DC) 600 V
    Case/Package TO-220
    Contact Plating Tin
    Mount Through Hole
    Number of Pins 3
    Number of Terminals 3
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