STB20NM50-1 Generic image

STB20NM50-1

Part No
STB20NM50-1
Manufacturer
STMicroelectronics
Description
Trans MOSFET N-CH 500V 20A 3-Pin(3+Tab) I2PAK Tube / MOSFET N-CH 550V 20A I2PAK
Datasheet
STB20NM50-1
Test Report
Available
Samples
Available

Request for Quote

    Availability:
    Available

    Product Specification

    Specification Value
    Continuous Drain Current (ID) 20 A
    Current Rating 20 A
    Drain to Source Breakdown Voltage 500 V
    Drain to Source Resistance 250 mΩ
    Drain to Source Voltage (Vdss) 550 V
    Element Configuration Single
    Fall Time 8.5 ns
    Gate to Source Voltage (Vgs) 30 V
    Input Capacitance 1.48 nF
    Max Operating Temperature 150 °C
    Max Power Dissipation 110 W
    Min Breakdown Voltage 500 V
    Min Operating Temperature -65 °C
    Number of Elements 1
    Power Dissipation 192 W
    Rds On Max 250 mΩ
    Resistance 200 mΩ
    Rise Time 16 ns
    Turn-Off Delay Time 9 ns
    Voltage Rating (DC) 550 V
    Case/Package TO-262-3
    Contact Plating Tin
    Mount Through Hole
    Number of Pins 3
    Number of Terminals 3
    added to cart View cart