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STP10N62K3
- Part No
- STP10N62K3
- Manufacturer
- STMicroelectronics
- Description
- N-channel 620 V, 0.68 Ohm typ., 8.4 A SuperMESH3(TM) Power MOSFET in TO-220 package
- Datasheet
- STP10N62K3
- Test Report
- Available
- Samples
- Available
Request for Quote
- Availability:
- Available
Product Specification
| Specification | Value |
|---|---|
| Continuous Drain Current (ID) | 8.4 A |
| Drain to Source Breakdown Voltage | 650 V |
| Drain to Source Resistance | 750 mΩ |
| Drain to Source Voltage (Vdss) | 620 V |
| Fall Time | 31 ns |
| Gate to Source Voltage (Vgs) | 30 V |
| Input Capacitance | 1.25 nF |
| Max Operating Temperature | 150 °C |
| Max Power Dissipation | 125 W |
| Min Breakdown Voltage | 620 V |
| Min Operating Temperature | -55 °C |
| Nominal Vgs | 3.75 V |
| Number of Elements | 1 |
| Power Dissipation | 125 W |
| Rds On Max | 750 mΩ |
| Resistance | 680 mΩ |
| Rise Time | 15 ns |
| Threshold Voltage | 3.75 V |
| Turn-Off Delay Time | 41 ns |
| Turn-On Delay Time | 14.5 ns |
| Case/Package | TO-220 |
| Mount | Through Hole |
| Number of Pins | 3 |
| Number of Terminals | 3 |
| Height | 15.75 mm |
| Length | 10.4 mm |
| Width | 4.6 mm |
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