MJD127T4 Generic image

MJD127T4

Part No
MJD127T4
Manufacturer
STMicroelectronics
Description
Darlington Transistor, Dual PNP, 100 V, 8 A, 20 W, 1000 hFE, TO-252 (DPAK), 3 Pins
Datasheet
MJD127T4
Test Report
Available
Samples
Available

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    Product Specification

    Specification Value
    Collector Base Voltage (VCBO) 100 V
    Collector Emitter Breakdown Voltage 100 V
    Collector Emitter Saturation Voltage 4 V
    Collector Emitter Voltage (VCEO) 100 V
    Current Rating -5 A
    Element Configuration Single
    Emitter Base Voltage (VEBO) 5 V
    hFE Min 100
    Max Breakdown Voltage 100 V
    Max Collector Current 8 A
    Max Junction Temperature (Tj) 150 °C
    Max Operating Temperature 150 °C
    Max Power Dissipation 20 W
    Min Operating Temperature -65 °C
    Number of Elements 1
    Packaging Tape and Reel
    Polarity PNP
    Power Dissipation 20 W
    Schedule B 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
    Voltage Rating (DC) -100 V
    Case/Package DPAK
    Mount Surface Mount
    Number of Pins 3
    Number of Terminals 2
    Weight 1.799996 g
    Height 2.63 mm
    Length 6.6 mm
    Width 6.2 mm
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