STN3P6F6 Generic image

STN3P6F6

Part No
STN3P6F6
Manufacturer
STMicroelectronics
Description
P-channel -60 V, 0.13 Ohm typ., -3 A STripFET F6 Power MOSFET in a SOT-223 package
Datasheet
STN3P6F6
Test Report
Available
Samples
Available

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    Product Specification

    Specification Value
    Continuous Drain Current (ID) 3 A
    Drain to Source Breakdown Voltage -60 V
    Drain to Source Resistance 160 mΩ
    Drain to Source Voltage (Vdss) -60 V
    Element Configuration Single
    Fall Time 3.7 ns
    Gate to Source Voltage (Vgs) 20 V
    Input Capacitance 340 pF
    Max Junction Temperature (Tj) 175 °C
    Max Operating Temperature 175 °C
    Max Power Dissipation 2.6 W
    Min Breakdown Voltage 60 V
    Min Operating Temperature -55 °C
    Number of Channels 1
    Number of Elements 1
    Packaging Tape and Reel
    Power Dissipation 2.6 W
    Rds On Max 160 mΩ
    Resistance 130 MΩ
    Rise Time 5.3 ns
    Schedule B 8541290080
    Threshold Voltage -4 V
    Turn-Off Delay Time 14 ns
    Turn-On Delay Time 6.4 ns
    Case/Package SOT-223
    Mount Surface Mount
    Number of Pins 4
    Number of Terminals 4
    Height 1.9 mm
    Length 6.7 mm
    Width 3.7 mm
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