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STB26NM60N
- Part No
- STB26NM60N
- Manufacturer
- STMicroelectronics
- Description
- N-channel 600 V, 0.135 Ohm typ., 20 A MDmesh(TM) II Power MOSFET in D2PAK package
- Datasheet
- STB26NM60N
- Test Report
- Available
- Samples
- Available
Request for Quote
- Availability:
- Available
Product Specification
| Specification | Value |
|---|---|
| Continuous Drain Current (ID) | 20 A |
| Drain to Source Breakdown Voltage | 600 V |
| Drain to Source Resistance | 165 mΩ |
| Drain to Source Voltage (Vdss) | 600 V |
| Element Configuration | Single |
| Fall Time | 50 ns |
| Gate to Source Voltage (Vgs) | 30 V |
| Input Capacitance | 1.8 nF |
| Max Junction Temperature (Tj) | 150 °C |
| Max Operating Temperature | 150 °C |
| Max Power Dissipation | 140 W |
| Manufacturer Package Identifier | D2PAK-0079457 |
| Min Breakdown Voltage | 600 V |
| Min Operating Temperature | -55 °C |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Packaging | Digi-Reel® |
| Power Dissipation | 140 W |
| Rds On Max | 165 mΩ |
| Resistance | 165 MΩ |
| Rise Time | 25 ns |
| Schedule B | 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080 |
| Threshold Voltage | 2 V |
| Turn-Off Delay Time | 85 ns |
| Turn-On Delay Time | 13 ns |
| Case/Package | D2PAK |
| Mount | Surface Mount |
| Number of Pins | 3 |
| Number of Terminals | 2 |
| Height | 4.83 mm |
| Length | 10.75 mm |
| Width | 10.4 mm |
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