STN3N40K3 Generic image

STN3N40K3

Part No
STN3N40K3
Manufacturer
STMicroelectronics
Description
N-channel 400 V, 3 Ohm, 1.8 A SuperMESH3(TM) Power MOSFET in SOT-223 package
Datasheet
STN3N40K3
Test Report
Available
Samples
Available

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    Product Specification

    Specification Value
    Continuous Drain Current (ID) 3 A
    Drain to Source Breakdown Voltage 400 V
    Drain to Source Resistance 3.3 Ω
    Drain to Source Voltage (Vdss) 400 V
    Element Configuration Single
    Fall Time 14 ns
    Gate to Source Voltage (Vgs) 30 V
    Input Capacitance 165 pF
    Max Junction Temperature (Tj) 150 °C
    Max Operating Temperature 150 °C
    Max Power Dissipation 3.3 W
    Min Breakdown Voltage 400 V
    Min Operating Temperature -55 °C
    Number of Channels 1
    Number of Elements 1
    Packaging Tape and Reel
    Power Dissipation 3.3 W
    Rds On Max 3.4 Ω
    Resistance 3.4 Ω
    Rise Time 8 ns
    Schedule B 8541290080
    Threshold Voltage 3.75 V
    Turn-Off Delay Time 18 ns
    Turn-On Delay Time 7 ns
    Case/Package SOT-223
    Mount Surface Mount
    Number of Pins 4
    Number of Terminals 3
    Height 1.9 mm
    Length 6.7 mm
    Width 3.7 mm
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