STD7N52K3 Generic image

STD7N52K3

Part No
STD7N52K3
Manufacturer
STMicroelectronics
Description
N-channel 525 V, 0.72 Ohm, 6 A, DPAK SuperMESH3(TM) Power MOSFET
Datasheet
STD7N52K3
Test Report
Available
Samples
Available

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    Product Specification

    Specification Value
    Continuous Drain Current (ID) 6.3 A
    Drain to Source Breakdown Voltage 525 V
    Drain to Source Resistance 980 mΩ
    Drain to Source Voltage (Vdss) 525 V
    Fall Time 19 ns
    Gate to Source Voltage (Vgs) 30 V
    Input Capacitance 737 pF
    Max Operating Temperature 150 °C
    Max Power Dissipation 90 W
    Min Breakdown Voltage 525 V
    Min Operating Temperature -55 °C
    Number of Elements 1
    Packaging Tape and Reel
    Power Dissipation 90 W
    Rds On Max 850 mΩ
    Resistance 850 mΩ
    Rise Time 11 ns
    Threshold Voltage 3.75 V
    Turn-Off Delay Time 36 ns
    Turn-On Delay Time 13 ns
    Case/Package DPAK
    Mount Surface Mount
    Number of Pins 3
    Number of Terminals 2
    Height 2.4 mm
    Length 6.6 mm
    Width 6.2 mm
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