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STH315N10F7-2
- Part No
- STH315N10F7-2
- Manufacturer
- STMicroelectronics
- Description
- Automotive-grade N-channel 100 V, 2.1 mOhm typ., 180 A STripFET F7 Power MOSFET
- Datasheet
- STH315N10F7-2
- Test Report
- Available
- Samples
- Available
Request for Quote
- Availability:
- Available
Product Specification
| Specification | Value |
|---|---|
| Continuous Drain Current (ID) | 180 A |
| Drain to Source Breakdown Voltage | 100 V |
| Drain to Source Resistance | 2.3 mΩ |
| Drain to Source Voltage (Vdss) | 100 V |
| Element Configuration | Single |
| Fall Time | 40 ns |
| Gate to Source Voltage (Vgs) | 20 V |
| Input Capacitance | 12.8 nF |
| Max Operating Temperature | 175 °C |
| Max Power Dissipation | 315 W |
| Min Breakdown Voltage | 100 V |
| Min Operating Temperature | -55 °C |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Packaging | Tape and Reel |
| Power Dissipation | 315 W |
| Rds On Max | 2.3 mΩ |
| Rise Time | 108 ns |
| Threshold Voltage | 3.5 V |
| Turn-Off Delay Time | 148 ns |
| Turn-On Delay Time | 62 ns |
| Case/Package | TO-263-3 |
| Mount | Surface Mount |
| Number of Pins | 3 |
| Number of Terminals | 2 |
| Weight | 3.949996 g |
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