STF2LN60K3 Generic image

STF2LN60K3

Part No
STF2LN60K3
Manufacturer
STMicroelectronics
Description
N-channel 600 V, 4 Ohm typ., 2 A, SuperMESH3(TM) Power MOSFET in TO-220FP package
Datasheet
STF2LN60K3
Test Report
Available
Samples
Available

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    Product Specification

    Specification Value
    Continuous Drain Current (ID) 2 A
    Drain to Source Breakdown Voltage 600 V
    Drain to Source Resistance 4.5 Ω
    Drain to Source Voltage (Vdss) 600 V
    Fall Time 21 ns
    Gate to Source Voltage (Vgs) 30 V
    Input Capacitance 235 pF
    Max Operating Temperature 150 °C
    Max Power Dissipation 20 W
    Min Breakdown Voltage 600 V
    Min Operating Temperature -55 °C
    Number of Elements 1
    Power Dissipation 45 W
    Rds On Max 4.5 Ω
    Rise Time 8.5 ns
    Turn-Off Delay Time 23.5 ns
    Turn-On Delay Time 10 ns
    Case/Package TO-220-3
    Mount Through Hole
    Number of Pins 3
    Number of Terminals 3
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