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STGW40H65FB
- Part No
- STGW40H65FB
- Manufacturer
- STMicroelectronics
- Description
- STGW40H65FB, IGBT Transistor, 80 A 650 V, 3-Pin TO-247
- Datasheet
- STGW40H65FB
- Test Report
- Available
- Samples
- Available
Request for Quote
- Availability:
- Available
Product Specification
| Specification | Value |
|---|---|
| Collector Base Breakdown Voltage (VCES) | 650 V |
| Collector Emitter Breakdown Voltage | 650 V |
| Collector Emitter Saturation Voltage | 2 V |
| Collector Emitter Voltage (VCEO) | 650 V |
| Element Configuration | Single |
| Max Collector Current | 80 A |
| Max Operating Temperature | 175 °C |
| Max Power Dissipation | 283 W |
| Min Operating Temperature | -55 °C |
| Number of Elements | 1 |
| Power Dissipation | 283 W |
| Schedule B | 8541290080 |
| Case/Package | TO-247-3 |
| Mount | Through Hole |
| Number of Pins | 3 |
| Number of Terminals | 3 |
| Height | 20.15 mm |
| Length | 15.75 mm |
| Width | 5.15 mm |
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