Generic image
STGB30M65DF2
- Part No
- STGB30M65DF2
- Manufacturer
- STMicroelectronics
- Description
- IGBT 650V 30A D2PAK / IGBT Trench Field Stop 650 V 60 A 258 W Surface Mount D²PAK (TO-263)
- Datasheet
- STGB30M65DF2
- Test Report
- Available
- Samples
- Available
Request for Quote
- Availability:
- Available
Product Specification
| Specification | Value |
|---|---|
| Collector Base Breakdown Voltage (VCES) | 650 V |
| Collector Emitter Breakdown Voltage | 650 V |
| Collector Emitter Saturation Voltage | 2 V |
| Collector Emitter Voltage (VCEO) | 650 V |
| Element Configuration | Single |
| Forward Current | 30 A |
| Forward Voltage | 1.85 V |
| Max Breakdown Voltage | 650 V |
| Max Collector Current | 60 A |
| Max Operating Temperature | 175 °C |
| Max Power Dissipation | 258 W |
| Min Operating Temperature | -55 °C |
| Number of Elements | 1 |
| Packaging | Tape and Reel |
| Reverse Recovery Time | 140 ns |
| Schedule B | 8541290080 |
| Case/Package | TO-263-3 |
| Mount | Surface Mount |
| Number of Pins | 3 |
| Number of Terminals | 2 |
added to cart
View cart
Related Products