STFI24N60M2 Generic image

STFI24N60M2

Part No
STFI24N60M2
Manufacturer
STMicroelectronics
Description
N-channel 600 V, 0.168 Ohm typ., 18 A MDmesh M2 Power MOSFET in I2PAKFP package
Datasheet
STFI24N60M2
Test Report
Available
Samples
Available

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    Product Specification

    Specification Value
    Continuous Drain Current (ID) 18 A
    Drain to Source Breakdown Voltage 600 V
    Drain to Source Resistance 168 mΩ
    Drain to Source Voltage (Vdss) 600 V
    Element Configuration Single
    Fall Time 15 ns
    Gate to Source Voltage (Vgs) 25 V
    Input Capacitance 1.06 nF
    Max Operating Temperature 150 °C
    Max Power Dissipation 30 W
    Min Operating Temperature -55 °C
    Power Dissipation 30 W
    Rds On Max 190 mΩ
    Rise Time 9 ns
    Turn-Off Delay Time 60 ns
    Turn-On Delay Time 14 ns
    Case/Package TO-262-3
    Mount Through Hole
    Number of Pins 3
    Height 10.85 mm
    Length 10.4 mm
    Width 4.6 mm
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