STF8NM60N Generic image

STF8NM60N

Part No
STF8NM60N
Manufacturer
STMicroelectronics
Description
N-channel 600 V - 0.56 Ω - 7 A - TO-220 - TO-220FP - IPAK - DPAK second generation MDmesh™ Power MOSFET | MOSFET N-CH 600V 7A TO-220FP
Datasheet
STF8NM60N
Test Report
Available
Samples
Available

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    Product Specification

    Specification Value
    Continuous Drain Current (ID) 7 A
    Drain to Source Breakdown Voltage 600 V
    Drain to Source Resistance 650 mΩ
    Drain to Source Voltage (Vdss) 600 V
    Element Configuration Single
    Fall Time 10 ns
    Gate to Source Voltage (Vgs) 25 V
    Input Capacitance 560 pF
    Max Operating Temperature 150 °C
    Max Power Dissipation 25 W
    Min Breakdown Voltage 600 V
    Min Operating Temperature -55 °C
    Number of Elements 1
    Power Dissipation 25 W
    Rds On Max 650 mΩ
    Rise Time 12 ns
    Turn-Off Delay Time 40 ns
    Case/Package TO-220-3
    Mount Through Hole
    Number of Pins 3
    Number of Terminals 3
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