STF4N62K3 Generic image

STF4N62K3

Part No
STF4N62K3
Manufacturer
STMicroelectronics
Description
N-channel 620 V, 1.7 Ohm typ., 3.8 A, SuperMESH3(TM) Power MOSFET in TO-220FP package
Datasheet
STF4N62K3
Test Report
Available
Samples
Available

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    Product Specification

    Specification Value
    Continuous Drain Current (ID) 3.8 A
    Drain to Source Breakdown Voltage 620 V
    Drain to Source Resistance 1.95 Ω
    Drain to Source Voltage (Vdss) 620 V
    Element Configuration Single
    Fall Time 19 ns
    Gate to Source Voltage (Vgs) 30 V
    Input Capacitance 550 pF
    Max Operating Temperature 150 °C
    Max Power Dissipation 25 W
    Min Breakdown Voltage 620 V
    Min Operating Temperature -55 °C
    Number of Elements 1
    Power Dissipation 25 W
    Rds On Max 2 Ω
    Resistance 2 Ω
    Rise Time 9 ns
    Threshold Voltage 3.75 V
    Turn-Off Delay Time 29 ns
    Turn-On Delay Time 10 ns
    Case/Package TO-220-3
    Mount Through Hole
    Number of Pins 3
    Number of Terminals 3
    Height 16.4 mm
    Length 10.4 mm
    Width 4.6 mm
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