STD4NK60ZT4 Generic image

STD4NK60ZT4

Part No
STD4NK60ZT4
Manufacturer
STMicroelectronics
Description
MOSFET N-CH 600V 4A DPAK
Datasheet
STD4NK60ZT4
Test Report
Available
Samples
Available

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    Product Specification

    Specification Value
    Continuous Drain Current (ID) 4 A
    Current Rating 4 A
    Drain to Source Breakdown Voltage 600 V
    Drain to Source Resistance 2 Ω
    Drain to Source Voltage (Vdss) 600 V
    Element Configuration Single
    Fall Time 16.5 ns
    Gate to Source Voltage (Vgs) 30 V
    Input Capacitance 510 pF
    Max Operating Temperature 150 °C
    Max Power Dissipation 70 W
    Min Breakdown Voltage 600 V
    Min Operating Temperature -55 °C
    Number of Elements 1
    Packaging Tape and Reel
    Power Dissipation 70 W
    Rds On Max 2 Ω
    Resistance 2 Ω
    Rise Time 9.5 ns
    Schedule B 8541290080, 8541290080|8541290080, 8541290080|8541290080|8541290080, 8541290080|8541290080|8541290080|8541290080
    Threshold Voltage 2.3 V
    Turn-Off Delay Time 29 ns
    Turn-On Delay Time 12 ns
    Voltage Rating (DC) 600 V
    Case/Package DPAK
    Contact Plating Tin
    Mount Surface Mount
    Number of Pins 3
    Number of Terminals 2
    Height 2.4 mm
    Length 6.6 mm
    Width 6.2 mm
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