Generic image
STD3NM60T4
- Part No
- STD3NM60T4
- Manufacturer
- STMicroelectronics
- Description
- MOSFET N-CH 600V 3A DPAK
- Datasheet
- STD3NM60T4
- Test Report
- Available
- Samples
- Available
Request for Quote
- Availability:
- Available
Product Specification
| Specification | Value |
|---|---|
| Continuous Drain Current (ID) | 3 A |
| Current Rating | 3 A |
| Drain to Source Breakdown Voltage | 600 V |
| Drain to Source Resistance | 1.5 Ω |
| Drain to Source Voltage (Vdss) | 600 V |
| Element Configuration | Single |
| Fall Time | 10.5 ns |
| Gate to Source Voltage (Vgs) | 30 V |
| Input Capacitance | 324 pF |
| Max Operating Temperature | 150 °C |
| Max Power Dissipation | 50 W |
| Min Breakdown Voltage | 600 V |
| Min Operating Temperature | -65 °C |
| Number of Elements | 1 |
| Packaging | Cut Tape |
| Power Dissipation | 42 W |
| Rds On Max | 1.5 Ω |
| Resistance | 1.5 Ω |
| Rise Time | 4 ns |
| Turn-On Delay Time | 9 ns |
| Voltage Rating (DC) | 600 V |
| Case/Package | TO-252-3 |
| Mount | Surface Mount |
| Number of Pins | 3 |
| Number of Terminals | 2 |
| Height | 2.4 mm |
| Length | 6.6 mm |
| Width | 6.2 mm |
added to cart
View cart
Related Products