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STB34N65M5
- Part No
- STB34N65M5
- Manufacturer
- STMicroelectronics
- Description
- N-channel 650 V, 0.09 Ohm typ., 28 A MDmesh M5 Power MOSFET in D2PAK package
- Datasheet
- STB34N65M5
- Test Report
- Available
- Samples
- Available
Request for Quote
- Availability:
- Available
Product Specification
| Specification | Value |
|---|---|
| Continuous Drain Current (ID) | 28 A |
| Drain to Source Breakdown Voltage | 650 V |
| Drain to Source Resistance | 110 mΩ |
| Drain to Source Voltage (Vdss) | 650 V |
| Element Configuration | Single |
| Gate to Source Voltage (Vgs) | 25 V |
| Input Capacitance | 2.7 nF |
| Max Operating Temperature | 150 °C |
| Max Power Dissipation | 190 W |
| Min Breakdown Voltage | 650 V |
| Min Operating Temperature | -55 °C |
| Number of Elements | 1 |
| Packaging | Tape and Reel |
| Power Dissipation | 190 W |
| Rds On Max | 110 mΩ |
| Resistance | 110 MΩ |
| Turn-Off Delay Time | 59 ns |
| Turn-On Delay Time | 59 ns |
| Case/Package | D2PAK |
| Mount | Surface Mount |
| Number of Pins | 3 |
| Number of Terminals | 2 |
| Height | 4.6 mm |
| Length | 10.4 mm |
| Width | 9.35 mm |
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