SQ3427EV-T1_GE3 Generic image

SQ3427EV-T1_GE3

Part No
SQ3427EV-T1_GE3
Manufacturer
Vishay
Description
MOSFET P-CH 60V 5.3A 6TSOP
Datasheet
SQ3427EV-T1_GE3
Test Report
Available
Samples
Available

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    Product Specification

    Specification Value
    Continuous Drain Current (ID) 5.3 A
    Drain to Source Breakdown Voltage -60 V
    Drain to Source Resistance 95 mΩ
    Drain to Source Voltage (Vdss) -60 V
    Gate to Source Voltage (Vgs) 20 V
    Max Junction Temperature (Tj) 175 °C
    Max Operating Temperature 175 °C
    Min Breakdown Voltage 60 V
    Min Operating Temperature -55 °C
    Number of Channels 1
    Number of Elements 1
    Power Dissipation 5 W
    Schedule B 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
    Turn-Off Delay Time 25 ns
    Turn-On Delay Time 8 ns
    Number of Terminals 6
    Height 1.1 mm
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