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SI1025X-T1-E3
- Part No
- SI1025X-T1-E3
- Manufacturer
- Vishay
- Description
- MOSFET 2P-CH 60V 0.19A SOT563F
- Datasheet
- SI1025X-T1-E3
- Test Report
- Available
- Samples
- Available
Request for Quote
- Availability:
- Available
Product Specification
| Specification | Value |
|---|---|
| Continuous Drain Current (ID) | 190 mA |
| Drain to Source Breakdown Voltage | -60 V |
| Drain to Source Resistance | 4 Ω |
| Element Configuration | Dual |
| Gate to Source Voltage (Vgs) | 20 V |
| Input Capacitance | 23 pF |
| Max Operating Temperature | 150 °C |
| Max Power Dissipation | 250 mW |
| Min Breakdown Voltage | 60 V |
| Min Operating Temperature | -55 °C |
| Number of Channels | 2 |
| Number of Elements | 2 |
| Packaging | Tape & Reel (TR) |
| Power Dissipation | 250 mW |
| Rds On Max | 4 Ω |
| Resistance | 4 Ω |
| Threshold Voltage | -3 V |
| Case/Package | SC |
| Mount | Surface Mount |
| Number of Pins | 6 |
| Number of Terminals | 6 |
| Weight | 32.006612 mg |
| Height | 600 µm |
| Length | 1.7 mm |
| Width | 1.2 mm |
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