SI4920DY-T1 Generic image

SI4920DY-T1

Part No
SI4920DY-T1
Manufacturer
Vishay
Description
Power Field-Effect Transistor, 6.9A I(D), N-Channel, Metal-oxide Semiconductor FET
Test Report
Available
Samples
Available

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    Product Specification

    Specification Value
    Continuous Drain Current (ID) 6.9 A
    Drain to Source Breakdown Voltage 30 V
    Drain to Source Resistance 25 mΩ
    Drain to Source Voltage (Vdss) 30 V
    Element Configuration Dual
    Fall Time 15 ns
    Gate to Source Voltage (Vgs) 20 V
    Max Operating Temperature 150 °C
    Max Power Dissipation 2 W
    Min Breakdown Voltage 30 V
    Min Operating Temperature -55 °C
    Number of Channels 2
    Number of Elements 2
    Power Dissipation 2 W
    Rise Time 10 ns
    Turn-Off Delay Time 60 ns
    Turn-On Delay Time 12 ns
    Case/Package SO
    Mount Surface Mount
    Number of Pins 8
    Number of Terminals 8
    Weight 186.993455 mg
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