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SPU03N60C3
- Part No
- SPU03N60C3
- Manufacturer
- Infineon
- Description
- Transistor Mosfet Power N-ch 650V 3.2A 3-PIN PG-TO-251
- Datasheet
- SPU03N60C3
- Test Report
- Available
- Samples
- Available
Request for Quote
- Availability:
- Available
Product Specification
| Specification | Value |
|---|---|
| Continuous Drain Current (ID) | 3.2 A |
| Drain to Source Breakdown Voltage | 600 V |
| Drain to Source Resistance | 1.4 Ω |
| Drain to Source Voltage (Vdss) | 600 V |
| Dual Supply Voltage | 650 V |
| Element Configuration | Single |
| Fall Time | 12 ns |
| Gate to Source Voltage (Vgs) | 20 V |
| Input Capacitance | 400 pF |
| Max Operating Temperature | 150 °C |
| Max Power Dissipation | 38 W |
| Min Breakdown Voltage | 600 V |
| Min Operating Temperature | -55 °C |
| Nominal Vgs | 3 V |
| Number of Elements | 1 |
| On-State Resistance | 1.4 Ω |
| Package Quantity | 1500 |
| Power Dissipation | 38 W |
| Rds On Max | 1.4 Ω |
| Rise Time | 3 ns |
| Termination | Through Hole |
| Turn-Off Delay Time | 64 ns |
| Turn-On Delay Time | 7 ns |
| Case/Package | TO-251-3 |
| Contact Plating | Tin |
| Number of Pins | 3 |
| Number of Terminals | 3 |
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