IRF6621TR1PBF Generic image

IRF6621TR1PBF

Part No
IRF6621TR1PBF
Manufacturer
Infineon
Description
Trans MOSFET N-CH Si 30V 12A 6-Pin Direct-FET SQ T/R / MOSFET N-CH 30V 12A DIRECTFET
Datasheet
IRF6621TR1PBF
Test Report
Available
Samples
Available

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    Product Specification

    Specification Value
    Continuous Drain Current (ID) 12 A
    Current Rating 12 A
    Drain to Source Breakdown Voltage 30 V
    Drain to Source Resistance 9.1 mΩ
    Drain to Source Voltage (Vdss) 30 V
    Fall Time 4.1 ns
    Gate to Source Voltage (Vgs) 20 V
    Input Capacitance 1.46 nF
    Max Operating Temperature 150 °C
    Max Power Dissipation 42 W
    Min Breakdown Voltage 30 V
    Min Operating Temperature -40 °C
    Nominal Vgs 1.8 V
    Number of Elements 1
    Power Dissipation 42 W
    Rds On Max 9.1 mΩ
    Rise Time 14 ns
    Threshold Voltage 1.8 V
    Turn-Off Delay Time 16 ns
    Turn-On Delay Time 12 ns
    Voltage Rating (DC) 20 V
    Mount Surface Mount
    Number of Pins 5
    Number of Terminals 2
    Height 506 µm
    Length 4.826 mm
    Width 3.95 mm
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