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SPI11N65C3
- Part No
- SPI11N65C3
- Manufacturer
- Infineon
- Description
- Trans MOSFET N-CH 650V 11A 3-Pin(3+Tab) TO-262
- Datasheet
- SPI11N65C3
- Test Report
- Available
- Samples
- Available
Request for Quote
- Availability:
- Available
Product Specification
| Specification | Value |
|---|---|
| Continuous Drain Current (ID) | 11 A |
| Current Rating | 11 A |
| Drain to Source Breakdown Voltage | 650 V |
| Drain to Source Resistance | 380 mΩ |
| Element Configuration | Single |
| Fall Time | 5 ns |
| Gate to Source Voltage (Vgs) | 20 V |
| Input Capacitance | 1.2 nF |
| Max Operating Temperature | 150 °C |
| Max Power Dissipation | 125 W |
| Min Breakdown Voltage | 650 V |
| Min Operating Temperature | -55 °C |
| Number of Elements | 1 |
| Power Dissipation | 33 W |
| Rds On Max | 380 mΩ |
| Rise Time | 5 ns |
| Turn-Off Delay Time | 44 ns |
| Turn-On Delay Time | 10 ns |
| Voltage Rating (DC) | 650 V |
| Case/Package | TO-262-3 |
| Number of Pins | 3 |
| Number of Terminals | 3 |
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