Generic image
IPB65R150CFDATMA1
- Part No
- IPB65R150CFDATMA1
- Manufacturer
- Infineon
- Description
- Single N-Channel 650 V 150 mOhm 86 nC CoolMOS Power Mosfet - D2PAK-3
- Datasheet
- IPB65R150CFDATMA1
- Test Report
- Available
- Samples
- Available
Request for Quote
- Availability:
- Available
Product Specification
| Specification | Value |
|---|---|
| Continuous Drain Current (ID) | 22.4 A |
| Drain to Source Breakdown Voltage | 650 V |
| Drain to Source Resistance | 150 mΩ |
| Drain to Source Voltage (Vdss) | 650 V |
| Fall Time | 5.6 ns |
| Gate to Source Voltage (Vgs) | 20 V |
| Input Capacitance | 2.34 nF |
| Max Dual Supply Voltage | 650 V |
| Max Junction Temperature (Tj) | 150 °C |
| Max Operating Temperature | 150 °C |
| Min Breakdown Voltage | 650 V |
| Min Operating Temperature | -55 °C |
| Number of Channels | 1 |
| Number of Elements | 1 |
| On-State Resistance | 150 mΩ |
| Package Quantity | 1000 |
| Packaging | Tape & Reel |
| Power Dissipation | 195.3 W |
| Rds On Max | 150 mΩ |
| Rise Time | 7.6 ns |
| Schedule B | 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080 |
| Turn-Off Delay Time | 52.8 ns |
| Turn-On Delay Time | 12.4 ns |
| Case/Package | TO-263-3 |
| Mount | Surface Mount |
| Number of Terminals | 2 |
| Height | 4.7 mm |
added to cart
View cart
Related Products
