SPB16N50C3 Generic image

SPB16N50C3

Part No
SPB16N50C3
Manufacturer
Infineon
Description
Mosfet Transistor, N Channel, 16 A, 560 V, 0.25 Ohm, 10 V, 3 V Rohs Compliant: Yes
Datasheet
SPB16N50C3
Test Report
Available
Samples
Available

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    Available

    Product Specification

    Specification Value
    Continuous Drain Current (ID) 16 A
    Current Rating 16 A
    Drain to Source Resistance 280 mΩ
    Drain to Source Voltage (Vdss) 500 V
    Gate to Source Voltage (Vgs) 20 V
    Max Dual Supply Voltage 500 V
    Max Operating Temperature 150 °C
    Max Power Dissipation 160 W
    Min Breakdown Voltage 500 V
    Min Operating Temperature -55 °C
    Number of Elements 1
    On-State Resistance 280 mΩ
    Package Quantity 1000
    Packaging Tape & Reel
    Power Dissipation 160 W
    Rise Time 8 ns
    Schedule B 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
    Turn-Off Delay Time 50 ns
    Turn-On Delay Time 10 ns
    Voltage Rating (DC) 560 V
    Case/Package TO-263
    Contact Plating Tin
    Mount Surface Mount
    Number of Pins 3
    Number of Terminals 2
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