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IPA65R420CFD
- Part No
- IPA65R420CFD
- Manufacturer
- Infineon
- Description
- MOSFET N-CH 650V 8.7A TO220
- Datasheet
- IPA65R420CFD
- Test Report
- Available
- Samples
- Available
Request for Quote
- Availability:
- Available
Product Specification
| Specification | Value |
|---|---|
| Continuous Drain Current (ID) | 8.7 A |
| Drain to Source Breakdown Voltage | 650 V |
| Drain to Source Resistance | 420 mΩ |
| Drain to Source Voltage (Vdss) | 650 V |
| Element Configuration | Single |
| Fall Time | 8 ns |
| Gate to Source Voltage (Vgs) | 30 V |
| Input Capacitance | 870 pF |
| Max Operating Temperature | 150 °C |
| Max Power Dissipation | 31.2 W |
| Min Breakdown Voltage | 650 V |
| Min Operating Temperature | -55 °C |
| Number of Elements | 1 |
| Power Dissipation | 31.25 W |
| Rds On Max | 420 mΩ |
| Resistance | 420 mΩ |
| Rise Time | 7 ns |
| Case/Package | TO-220-3 |
| Number of Pins | 3 |
| Number of Terminals | 3 |
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