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SIR844DP-T1-GE3
- Part No
- SIR844DP-T1-GE3
- Manufacturer
- Vishay
- Description
- MOSFET N-CH 25V 50A PPAK SO-8
- Datasheet
- SIR844DP-T1-GE3
- Test Report
- Available
- Samples
- Available
Request for Quote
- Availability:
- Available
Product Specification
| Specification | Value |
|---|---|
| Continuous Drain Current (ID) | 30 A |
| Drain to Source Breakdown Voltage | 25 V |
| Drain to Source Resistance | 2.8 mΩ |
| Drain to Source Voltage (Vdss) | 25 V |
| Fall Time | 18 ns |
| Gate to Source Voltage (Vgs) | 20 V |
| Input Capacitance | 3.215 nF |
| Max Operating Temperature | 150 °C |
| Max Power Dissipation | 50 W |
| Min Breakdown Voltage | 25 V |
| Min Operating Temperature | -55 °C |
| Number of Elements | 1 |
| Rds On Max | 2.8 mΩ |
| Rise Time | 21 ns |
| Turn-Off Delay Time | 39 ns |
| Turn-On Delay Time | 23 ns |
| Case/Package | SO |
| Mount | Surface Mount |
| Number of Terminals | 5 |
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