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SI1013CX-T1-GE3
- Part No
- SI1013CX-T1-GE3
- Manufacturer
- Vishay
- Description
- P-Channel 20-V (D-S) Mosfet Rohs Compliant: Yes |Vishay SI1013CX-T1-GE3
- Datasheet
- SI1013CX-T1-GE3
- Test Report
- Available
- Samples
- Available
Request for Quote
- Availability:
- Available
Product Specification
| Specification | Value |
|---|---|
| Continuous Drain Current (ID) | 450 mA |
| Drain to Source Breakdown Voltage | -20 V |
| Drain to Source Resistance | 760 mΩ |
| Drain to Source Voltage (Vdss) | 20 V |
| Fall Time | 5 ns |
| Gate to Source Voltage (Vgs) | 8 V |
| Input Capacitance | 45 pF |
| Max Operating Temperature | 150 °C |
| Max Power Dissipation | 190 mW |
| Min Breakdown Voltage | 20 V |
| Min Operating Temperature | -55 °C |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Packaging | Tape & Reel (TR) |
| Power Dissipation | 190 mW |
| Rds On Max | 760 mΩ |
| Rise Time | 8 ns |
| Schedule B | 8541210080, 8541210080|8541210080|8541210080|8541210080|8541210080 |
| Turn-Off Delay Time | 9 ns |
| Turn-On Delay Time | 1 ns |
| Case/Package | SOT-563-3 |
| Mount | Surface Mount |
| Number of Pins | 3 |
| Number of Terminals | 3 |
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