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SIC779CD-T1-GE3
- Part No
- SIC779CD-T1-GE3
- Manufacturer
- Vishay
- Description
- Integrated DrMOS Power Stage
- Datasheet
- SIC779CD-T1-GE3
- Test Report
- Available
- Samples
- Available
Request for Quote
- Availability:
- Available
Product Specification
| Specification | Value |
|---|---|
| Fall Time | 8 ns |
| Max Operating Temperature | 125 °C |
| Max Power Dissipation | 25 W |
| Max Supply Voltage | 16 V |
| Min Operating Temperature | -40 °C |
| Min Supply Voltage | 3 V |
| Number of Circuits | 1 |
| Number of Drivers | 1 |
| Number of Outputs | 1 |
| Operating Supply Current | 600 µA |
| Operating Supply Voltage | 12 V |
| Output Current | 40 A |
| Output Current per Channel | 40 A |
| Output Voltage | 5 V |
| Packaging | Cut Tape |
| Rise Time | 8 ns |
| Schedule B | 8542390000 |
| Turn-Off Delay Time | 20 ns |
| Mount | Surface Mount |
| Number of Pins | 40 |
| Number of Terminals | 40 |
| Height - Seated (Max) | 800 µm |
| Length | 6 mm |
| Terminal Pitch | 500 µm |
| Width | 6 mm |
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