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SI1016CX-T1-GE3
- Part No
- SI1016CX-T1-GE3
- Manufacturer
- Vishay
- Description
- VISHAY SI1016CX-T1-GE3 Dual MOSFET, N and P Channel, 600 mA, 20 V, 0.33 ohm, 4.5 V, 400 mV
- Datasheet
- SI1016CX-T1-GE3
- Test Report
- Available
- Samples
- Available
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- Availability:
- Available
Product Specification
| Specification | Value |
|---|---|
| Continuous Drain Current (ID) | 600 mA |
| Drain to Source Breakdown Voltage | 20 V |
| Drain to Source Resistance | 396 mΩ |
| Drain to Source Voltage (Vdss) | 20 V |
| Fall Time | 11 ns |
| Gate to Source Voltage (Vgs) | 8 V |
| Input Capacitance | 43 pF |
| Max Junction Temperature (Tj) | 150 °C |
| Max Operating Temperature | 150 °C |
| Max Power Dissipation | 220 mW |
| Min Breakdown Voltage | 20 V |
| Min Operating Temperature | -55 °C |
| Number of Channels | 2 |
| Number of Elements | 2 |
| Packaging | Cut Tape |
| Power Dissipation | 220 mW |
| Rds On Max | 396 mΩ |
| Rise Time | 16 ns |
| Schedule B | 8541210080, 8541210080|8541210080|8541210080|8541210080|8541210080 |
| Threshold Voltage | 400 mV |
| Turn-Off Delay Time | 26 ns |
| Turn-On Delay Time | 11 ns |
| Case/Package | SOT-563 |
| Mount | Surface Mount |
| Number of Pins | 6 |
| Number of Terminals | 6 |
| Weight | 8.193012 mg |
| Height | 600 µm |
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