Generic image
SIA921EDJ-T1-GE3
- Part No
- SIA921EDJ-T1-GE3
- Manufacturer
- Vishay
- Description
- SIA921EDJ-T1-GE3 DUAL P-CHANNEL MOSFET TRANSISTOR, 4.5 A, 20 V, 6-PIN SC-70
- Datasheet
- SIA921EDJ-T1-GE3
- Test Report
- Available
- Samples
- Available
Request for Quote
- Availability:
- Available
Product Specification
| Specification | Value |
|---|---|
| Continuous Drain Current (ID) | 4.5 A |
| Drain to Source Breakdown Voltage | -20 V |
| Drain to Source Resistance | 59 mΩ |
| Drain to Source Voltage (Vdss) | -20 V |
| Element Configuration | Dual |
| Fall Time | 10 ns |
| Gate to Source Voltage (Vgs) | 12 V |
| Max Junction Temperature (Tj) | 150 °C |
| Max Operating Temperature | 150 °C |
| Max Power Dissipation | 7.8 W |
| Manufacturer Package Identifier | C-07431-DUAL |
| Min Breakdown Voltage | 20 V |
| Min Operating Temperature | -55 °C |
| Number of Channels | 2 |
| Number of Elements | 2 |
| Power Dissipation | 1.9 W |
| Rds On Max | 59 mΩ |
| Resistance | 59 MΩ |
| Rise Time | 12 ns |
| Schedule B | 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080 |
| Turn-Off Delay Time | 25 ns |
| Turn-On Delay Time | 20 ns |
| Case/Package | TSOP |
| Mount | Surface Mount |
| Number of Pins | 6 |
| Number of Terminals | 6 |
| Weight | 28.009329 mg |
| Height | 800 µm |
| Length | 2.05 mm |
| Width | 2.05 mm |
added to cart
View cart
Related Products