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SI7852DP-T1-GE3

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Specification	Value
Continuous Drain Current (ID)	7.6 A
Drain to Source Breakdown Voltage	80 V
Drain to Source Resistance	16.5 mΩ
Drain to Source Voltage (Vdss)	80 V
Element Configuration	Single
Fall Time	31 ns
Gate to Source Voltage (Vgs)	20 V
Input Capacitance	2.32 nF
Max Junction Temperature (Tj)	150 °C
Max Operating Temperature	150 °C
Max Power Dissipation	5.2 W
Manufacturer Package Identifier	S17-0173-Single
Min Breakdown Voltage	80 V
Min Operating Temperature	-55 °C
Number of Channels	1
Number of Elements	1
Power Dissipation	1.9 W
Rds On Max	16.5 mΩ
Rise Time	11 ns
Threshold Voltage	2 V
Turn-Off Delay Time	40 ns
Turn-On Delay Time	17 ns
Contact Plating	Tin
Mount	Surface Mount
Number of Pins	8
Number of Terminals	5
Weight	506.605978 mg
Height	1.12 mm
Length	4.9 mm
Width	5.89 mm