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SI7898DP-T1-GE3
- Part No
- SI7898DP-T1-GE3
- Manufacturer
- Vishay
- Description
- MOSFET N-CH 150V 3A PPAK SO-8
- Datasheet
- SI7898DP-T1-GE3
- Test Report
- Available
- Samples
- Available
Request for Quote
- Availability:
- Available
Product Specification
| Specification | Value |
|---|---|
| Continuous Drain Current (ID) | 3 A |
| Drain to Source Breakdown Voltage | 150 V |
| Drain to Source Resistance | 85 mΩ |
| Drain to Source Voltage (Vdss) | 150 V |
| Dual Supply Voltage | 150 V |
| Element Configuration | Single |
| Fall Time | 10 ns |
| Gate to Source Voltage (Vgs) | 20 V |
| Max Operating Temperature | 150 °C |
| Max Power Dissipation | 5 W |
| Min Breakdown Voltage | 150 V |
| Min Operating Temperature | -55 °C |
| Nominal Vgs | 4 V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Packaging | Cut Tape |
| Power Dissipation | 1.9 W |
| Rds On Max | 85 mΩ |
| Resistance | 85 mΩ |
| Rise Time | 10 ns |
| Schedule B | 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080 |
| Termination | SMD/SMT |
| Threshold Voltage | 4 V |
| Turn-Off Delay Time | 24 ns |
| Turn-On Delay Time | 9 ns |
| Case/Package | SOIC |
| Contact Plating | Tin |
| Mount | Surface Mount |
| Number of Pins | 8 |
| Number of Terminals | 5 |
| Weight | 506.605978 mg |
| Height | 1.04 mm |
| Length | 4.9 mm |
| Width | 5.89 mm |
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