SI1905DL-T1-E3 Generic image

SI1905DL-T1-E3

Part No
SI1905DL-T1-E3
Manufacturer
Vishay
Description
MOSFET 2P-CH 8V 0.57A SC70-6
Test Report
Available
Samples
Available

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    Availability:
    Available

    Product Specification

    Specification Value
    Continuous Drain Current (ID) 570 mA
    Drain to Source Breakdown Voltage 8 V
    Drain to Source Resistance 600 mΩ
    Element Configuration Dual
    Fall Time 25 ns
    Gate to Source Voltage (Vgs) 8 V
    Max Operating Temperature 150 °C
    Max Power Dissipation 270 mW
    Min Breakdown Voltage 8 V
    Min Operating Temperature -55 °C
    Nominal Vgs -450 mV
    Number of Elements 2
    Power Dissipation 270 mW
    Rds On Max 600 mΩ
    Resistance 600 mΩ
    Rise Time 25 ns
    Turn-Off Delay Time 10 ns
    Turn-On Delay Time 6 ns
    Case/Package SC
    Mount Surface Mount
    Number of Pins 6
    Number of Terminals 6
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