SI7888DP-T1-E3 Generic image

SI7888DP-T1-E3

Part No
SI7888DP-T1-E3
Manufacturer
Vishay
Description
MOSFET N-CH 30V 9.4A PPAK SO-8
Test Report
Available
Samples
Available

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    Availability:
    Available

    Product Specification

    Specification Value
    Continuous Drain Current (ID) 9.4 A
    Drain to Source Resistance 12 mΩ
    Drain to Source Voltage (Vdss) 30 V
    Element Configuration Single
    Fall Time 11 ns
    Gate to Source Voltage (Vgs) 20 V
    Max Operating Temperature 150 °C
    Max Power Dissipation 5 W
    Min Breakdown Voltage 30 V
    Min Operating Temperature -55 °C
    Number of Elements 1
    Power Dissipation 1.8 W
    Rds On Max 12 mΩ
    Rise Time 11 ns
    Turn-Off Delay Time 24 ns
    Turn-On Delay Time 10 ns
    Case/Package SO
    Mount Surface Mount
    Number of Pins 8
    Number of Terminals 5
    Height 1.0668 mm
    Length 5.969 mm
    Width 5.0038 mm
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