SI7450DP-T1-GE3 Generic image

SI7450DP-T1-GE3

Part No
SI7450DP-T1-GE3
Manufacturer
Vishay
Description
Voltage:10V; Gate Source Threshold Voltage Max:4.5V; Power Dissipation:1.9W Rohs Compliant: No |Vishay SI7450DP-T1-GE3.
Datasheet
SI7450DP-T1-GE3
Test Report
Available
Samples
Available

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    Product Specification

    Specification Value
    Continuous Drain Current (ID) 3.2 A
    Drain to Source Breakdown Voltage 200 V
    Drain to Source Resistance 90 mΩ
    Drain to Source Voltage (Vdss) 200 V
    Element Configuration Single
    Fall Time 20 ns
    Gate to Source Voltage (Vgs) 20 V
    Max Junction Temperature (Tj) 150 °C
    Max Operating Temperature 150 °C
    Max Power Dissipation 5.2 W
    Manufacturer Package Identifier S17-0173-Single
    Min Breakdown Voltage 200 V
    Min Operating Temperature -55 °C
    Number of Channels 1
    Number of Elements 1
    Packaging Cut Tape
    Power Dissipation 1.9 W
    Rds On Max 80 mΩ
    Resistance 80 mΩ
    Rise Time 20 ns
    Schedule B 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
    Threshold Voltage 4.5 V
    Turn-Off Delay Time 32 ns
    Turn-On Delay Time 14 ns
    Case/Package SOIC
    Contact Plating Tin
    Mount Surface Mount
    Number of Pins 8
    Number of Terminals 5
    Weight 506.605978 mg
    Height 1.17 mm
    Length 4.9 mm
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