SI1026X-T1-E3 Generic image

SI1026X-T1-E3

Part No
SI1026X-T1-E3
Manufacturer
Vishay
Description
MOSFET 2N-CH 60V 0.305A SOT563F
Test Report
Available
Samples
Available

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    Available

    Product Specification

    Specification Value
    Continuous Drain Current (ID) 305 mA
    Drain to Source Breakdown Voltage 60 V
    Drain to Source Resistance 1.4 Ω
    Drain to Source Voltage (Vdss) 60 V
    Element Configuration Dual
    Gate to Source Voltage (Vgs) 20 V
    Input Capacitance 30 pF
    Max Operating Temperature 150 °C
    Max Power Dissipation 280 mW
    Min Breakdown Voltage 60 V
    Min Operating Temperature -55 °C
    Number of Channels 2
    Number of Elements 2
    Power Dissipation 250 mW
    Rds On Max 1.4 Ω
    Resistance 3 Ω
    Case/Package SC
    Mount Surface Mount
    Number of Pins 6
    Number of Terminals 6
    Weight 32.006612 mg
    Height 600 µm
    Length 1.7 mm
    Width 1.2 mm
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