Generic image
SI7370DP-T1
- Part No
- SI7370DP-T1
- Manufacturer
- Vishay
- Description
- Power Field-Effect Transistor, 9.6A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
- Datasheet
- SI7370DP-T1
- Test Report
- Available
- Samples
- Available
Request for Quote
- Availability:
- Upon a request
Product Specification
| Specification | Value |
|---|---|
| Continuous Drain Current (ID) | 9.6 A |
| Drain to Source Resistance | 11 mΩ |
| Max Operating Temperature | 150 °C |
| Max Power Dissipation | 5.2 W |
| Min Breakdown Voltage | 60 V |
| Number of Elements | 1 |
| Number of Pins | 8 |
| Number of Terminals | 8 |
added to cart
View cart