SI7370DP-T1 Generic image

SI7370DP-T1

Part No
SI7370DP-T1
Manufacturer
Vishay
Description
Power Field-Effect Transistor, 9.6A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
Datasheet
SI7370DP-T1
Test Report
Available
Samples
Available

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    Product Specification

    Specification Value
    Continuous Drain Current (ID) 9.6 A
    Drain to Source Resistance 11 mΩ
    Max Operating Temperature 150 °C
    Max Power Dissipation 5.2 W
    Min Breakdown Voltage 60 V
    Number of Elements 1
    Number of Pins 8
    Number of Terminals 8
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