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SI1069X-T1-GE3
- Part No
- SI1069X-T1-GE3
- Manufacturer
- Vishay
- Description
- MOSFET P-CH 20V 0.94A SC89-6
- Datasheet
- SI1069X-T1-GE3
- Test Report
- Available
- Samples
- Available
Request for Quote
- Availability:
- Available
Product Specification
| Specification | Value |
|---|---|
| Continuous Drain Current (ID) | 940 mA |
| Drain to Source Breakdown Voltage | -20 V |
| Drain to Source Resistance | 184 mΩ |
| Element Configuration | Single |
| Fall Time | 31 ns |
| Gate to Source Voltage (Vgs) | 12 V |
| Input Capacitance | 308 pF |
| Max Operating Temperature | 150 °C |
| Max Power Dissipation | 236 mW |
| Min Breakdown Voltage | 20 V |
| Min Operating Temperature | -55 °C |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Rds On Max | 184 mΩ |
| Rise Time | 31 ns |
| Turn-Off Delay Time | 23 ns |
| Turn-On Delay Time | 19 ns |
| Case/Package | SC |
| Mount | Surface Mount |
| Number of Pins | 6 |
| Number of Terminals | 6 |
| Weight | 32.006612 mg |
| Height | 600 µm |
| Length | 1.7 mm |
| Width | 1.2 mm |
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