SI7145DP-T1-GE3 Generic image

SI7145DP-T1-GE3

Part No
SI7145DP-T1-GE3
Manufacturer
Vishay
Description
) Test Voltage:4.5V; Gate Source Threshold Voltage Max:2.3V; Power Dissipation:104W Rohs Compliant: Yes |Vishay SI7145DP-T1-GE3.
Datasheet
SI7145DP-T1-GE3
Test Report
Available
Samples
Available

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    Product Specification

    Specification Value
    Continuous Drain Current (ID) 36.5 A
    Drain to Source Breakdown Voltage -30 V
    Drain to Source Resistance 2.6 mΩ
    Drain to Source Voltage (Vdss) -30 V
    Element Configuration Single
    Fall Time 43 ns
    Gate to Source Voltage (Vgs) 20 V
    Input Capacitance 15.66 nF
    Max Junction Temperature (Tj) 150 °C
    Max Operating Temperature 150 °C
    Max Power Dissipation 104 W
    Manufacturer Package Identifier S17-0173-Single
    Min Breakdown Voltage 30 V
    Min Operating Temperature -55 °C
    Nominal Vgs -2.3 V
    Number of Channels 1
    Number of Elements 1
    Power Dissipation 6.25 W
    Rds On Max 2.6 mΩ
    Resistance 2.6 mΩ
    Rise Time 110 ns
    Schedule B 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
    Threshold Voltage -2.3 V
    Turn-Off Delay Time 130 ns
    Turn-On Delay Time 27 ns
    Contact Plating Tin
    Mount Surface Mount
    Number of Pins 8
    Number of Terminals 5
    Weight 506.605978 mg
    Height 1.17 mm
    Length 4.9 mm
    Width 5.89 mm
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