SI4890DY-T1-E3 Generic image

SI4890DY-T1-E3

Part No
SI4890DY-T1-E3
Manufacturer
Vishay
Description
MOSFET N-CH 30V 11A 8-SOIC
Test Report
Available
Samples
Available

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    Product Specification

    Specification Value
    Continuous Drain Current (ID) 11 A
    Drain to Source Breakdown Voltage 30 V
    Drain to Source Resistance 12 mΩ
    Drain to Source Voltage (Vdss) 30 V
    Element Configuration Single
    Fall Time 17 ns
    Gate to Source Voltage (Vgs) 25 V
    Max Operating Temperature 150 °C
    Max Power Dissipation 2.5 W
    Min Breakdown Voltage 30 V
    Min Operating Temperature -55 °C
    Nominal Vgs 800 mV
    Number of Channels 1
    Number of Elements 1
    Power Dissipation 2.5 W
    Rds On Max 12 mΩ
    Rise Time 8.5 ns
    Turn-Off Delay Time 35 ns
    Turn-On Delay Time 13 ns
    Case/Package SO
    Mount Surface Mount
    Number of Pins 8
    Number of Terminals 8
    Weight 186.993455 mg
    Height 1.55 mm
    Length 5 mm
    Width 4 mm
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