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SI5475DC-T1
- Part No
- SI5475DC-T1
- Manufacturer
- Vishay
- Description
- Small Signal Field-Effect Transistor, 5.5A I(D), 1-Element, P-Channel, Metal-oxide Semiconductor FET
- Datasheet
- SI5475DC-T1
- Test Report
- Available
- Samples
- Available
Request for Quote
- Availability:
- Upon a request
Product Specification
| Specification | Value |
|---|---|
| Continuous Drain Current (ID) | 5.5 A |
| Drain to Source Resistance | 31 mΩ |
| Drain to Source Voltage (Vdss) | -12 V |
| Element Configuration | Single |
| Fall Time | 80 ns |
| Gate to Source Voltage (Vgs) | 8 V |
| Max Operating Temperature | 150 °C |
| Max Power Dissipation | 2.5 W |
| Min Breakdown Voltage | 12 V |
| Min Operating Temperature | -55 °C |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Power Dissipation | 2.5 W |
| Rise Time | 20 ns |
| Turn-Off Delay Time | 122 ns |
| Turn-On Delay Time | 15 ns |
| Number of Pins | 8 |
| Number of Terminals | 8 |
| Weight | 84.99187 mg |
| Height | 1.1 mm |
| Length | 3.05 mm |
| Width | 1.65 mm |
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