IRF640STRRPBF Generic image

IRF640STRRPBF

Part No
IRF640STRRPBF
Manufacturer
Vishay
Description
Single N-Channel 200 V 0.18 Ohms Surface Mount Power Mosfet - D2PAK-3
Test Report
Available
Samples
Available

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    Product Specification

    Specification Value
    Continuous Drain Current (ID) 18 A
    Drain to Source Breakdown Voltage 200 V
    Drain to Source Resistance 180 mΩ
    Drain to Source Voltage (Vdss) 200 V
    Element Configuration Single
    Fall Time 36 ns
    Gate to Source Voltage (Vgs) 20 V
    Input Capacitance 1.3 nF
    Max Operating Temperature 150 °C
    Max Power Dissipation 130 W
    Min Breakdown Voltage 200 V
    Min Operating Temperature -55 °C
    Number of Channels 1
    Number of Elements 1
    Power Dissipation 130 W
    Rds On Max 180 mΩ
    Resistance 180 mΩ
    Rise Time 51 ns
    Schedule B 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
    Turn-Off Delay Time 45 ns
    Turn-On Delay Time 14 ns
    Case/Package D2PAK
    Mount Surface Mount
    Number of Pins 3
    Number of Terminals 2
    Weight 1.437803 g
    Height 4.83 mm
    Length 10.67 mm
    Width 9.65 mm
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